型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3147(S)-3 | HITACHI |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
2SK3147(S)-3 | RENESAS |
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TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,5A I(D),TO-252VAR | |
2SK3147L | HITACHI |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK3147L-E | RENESAS |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK3147S | KEXIN |
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Silicon N Cannel MOSFET | |
2SK3147S | HITACHI |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK3147S | TYSEMI |
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Low on-resistance RDS = 0.1 typ. 4 V gate drive device can be driven from 5 V source | |
2SK3147S-E | RENESAS |
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5A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | |
2SK3147STL-E | RENESAS |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK3148 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |