生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 20 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 50 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3150L | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3150L-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3150S | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3150STL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3151 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3151 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3151-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3152 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3152 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3153 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |