5秒后页面跳转
2SK3147(S)-3 PDF预览

2SK3147(S)-3

更新时间: 2024-11-05 14:46:23
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
14页 77K
描述
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,5A I(D),TO-252VAR

2SK3147(S)-3 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:compliant风险等级:5.76
配置:Single最大漏极电流 (Abs) (ID):5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):20 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

2SK3147(S)-3 数据手册

 浏览型号2SK3147(S)-3的Datasheet PDF文件第2页浏览型号2SK3147(S)-3的Datasheet PDF文件第3页浏览型号2SK3147(S)-3的Datasheet PDF文件第4页浏览型号2SK3147(S)-3的Datasheet PDF文件第5页浏览型号2SK3147(S)-3的Datasheet PDF文件第6页浏览型号2SK3147(S)-3的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

与2SK3147(S)-3相关器件

型号 品牌 获取价格 描述 数据表
2SK3147L HITACHI

获取价格

Silicon N Channel MOS FET High Speed Power Switching
2SK3147L-E RENESAS

获取价格

Silicon N Channel MOS FET High Speed Power Switching
2SK3147S KEXIN

获取价格

Silicon N Cannel MOSFET
2SK3147S HITACHI

获取价格

Silicon N Channel MOS FET High Speed Power Switching
2SK3147S TYSEMI

获取价格

Low on-resistance RDS = 0.1 typ. 4 V gate drive device can be driven from 5 V source
2SK3147S-E RENESAS

获取价格

5A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
2SK3147STL-E RENESAS

获取价格

Silicon N Channel MOS FET High Speed Power Switching
2SK3148 RENESAS

获取价格

Silicon N Channel MOS FET High Speed Power Switching
2SK3148 HITACHI

获取价格

Silicon N Channel MOS FET High Speed Power Switching
2SK3148-E RENESAS

获取价格

Silicon N Channel MOS FET High Speed Power Switching