Datasheet > 2SK3147S

2SK3147S

更新时间： 2024-11-09 12:31:39

品牌	Logo	应用领域
TYSEMI		驱动器栅极栅极驱动
页数	文件大小	规格书
1页	130K
描述
Low on-resistance RDS = 0.1 typ. 4 V gate drive device can be driven from 5 V source

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2SK3147S 数据手册

TransistIoCrs

Product specification

2SK3147S

Features

TO-252

Unit: mm

Low on-resistance

R^DS= 0.1 typ.

+0.15

-0.15

+0.1

2.30

-0.1

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

High speed switching

4 V gate drive device can be driven from 5 V source

0.127

max

+0.1

0.80

-0.1

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

VDSS

V^GSS

I^D

Rating

Unit

100

Gate to source voltage

Drain current

I^dp*

P^D

Power dissipation

Channel temperature

Storage temperature

* PW 10 s,Duty Cycle 1%

T^ch

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^DSS

Testconditons

V^DS=100V,V^GS=0

Min

Typ

Max

Unit

Drain cut-off current

Gate leakage current

I^GSS

V^GS(off)

Y^fs

V^GS= 16V,V^DS=0

V^DS=10V,I^D=1mA

V^DS=10V,I^D=3A

V^GS=10V,I^D=3A

V^GS=4V,I^D=3A

Gate to source cut off voltage

Forward transfer admittance

1..0

3.5

2.5

0.1

0.13

Drain to source on-state resistance

R^DS(on)

0.13 0.18

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Ciss

Coss

C^rss

t^on

t^r

420

185

100

V^DS=10V,V^GS=0,f=1MHZ

I^D=3A,V^GS(on)=10V,R^L=10

Turn-off delay time

Fall time

t^off

110

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