Datasheet > 2SK3070(S)

2SK3070(S)

更新时间： 2024-11-10 23:20:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
10页	77K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 40V V(BR)DSS \| 75A I(D) \| TO-263VAR

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2SK3070(S) 数据手册

2SK3070(L),2SK3070(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-684G (Z)

8th. Edition

Feb. 1, 1999

Features

•

Low on-resistance

R_DS(on)= 4.5 mΩ typ.

•

Low drive current

4 V gate drive device can be driven from 5 V source

Outline

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
2SK3070L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3070L-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3070S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3070STL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3072	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SK3074	TOSHIBA	获取价格	N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
2SK3074_07	TOSHIBA	获取价格	SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
2SK3075	TOSHIBA	获取价格	N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
2SK3075(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,5A I(D),RFMOD
2SK3075_07	TOSHIBA	获取价格	SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIE