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2SK210-GR PDF预览

2SK210-GR

更新时间： 2024-11-30 12:49:31
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体放大器小信号场效应晶体管射频小信号场效应晶体管光电二极管
页数 文件大小 规格书
6页 329K
描述
FM Tuner Applications VHF Band Amplifier Applications

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中文翻译

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2SK210-GR 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Lifetime Buy零件包装代码：SC-59
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：unknownHTS代码：8541.21.00.95
风险等级：5.18Is Samacsys：N
配置：SINGLEFET 技术：JUNCTION
最大反馈电容 (Crss)：0.65 pF最高频带：VERY HIGH FREQUENCY BAND
JESD-30 代码：R-PDSO-G3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：DEPLETION MODE最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.1 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

2SK210-GR 数据手册

 浏览型号2SK210-GR的Datasheet PDF文件第2页浏览型号2SK210-GR的Datasheet PDF文件第3页浏览型号2SK210-GR的Datasheet PDF文件第4页浏览型号2SK210-GR的Datasheet PDF文件第5页浏览型号2SK210-GR的Datasheet PDF文件第6页 
2SK210  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK210  
FM Tuner Applications  
VHF Band Amplifier Applications  
Unit: mm  
•
•
•
High power gain: G = 24dB (typ.) (f = 100 MHz)  
PS  
Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)  
High forward transfer admittance: |Y | = 7 mS (typ.) (f = 1 kHz)  
fs  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
−18  
10  
V
GDO  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
100  
D
T
j
125  
T
stg  
−55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
SC-59  
TOSHIBA  
2-3F1C  
Weight: 0.012 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
= −1.0 V, V = 0 V  
DS  
⎯
⎯
⎯
−10  
nA  
V
GSS  
GS  
Gate-drain breakdown voltage  
V
I
= −100 μA  
−18  
⎯
(BR) GDO  
G
I
DSS  
(Note)  
Drain current  
V
= 0 V, V = 10 V  
DS  
3
⎯
24  
mA  
GS  
Gate-source cut-off voltage  
Forward transfer admittance  
Input capacitance  
V
V
V
V
V
V
V
= 10 V, I = 1 μA  
−1.2  
⎯
−3  
7
⎯
⎯
V
GS (OFF)  
⎪Y ⎪  
DS  
GS  
DS  
GD  
DD  
DD  
D
= 0 V, V = 10 V, f = 1 kHz  
DS  
mS  
pF  
pF  
dB  
dB  
fs  
C
= 10 V, V  
= 0, f = 1 MHz  
GS  
⎯
3.5  
⎯
⎯
iss  
rss  
PS  
Reverse transfer capacitance  
Power gain  
C
G
= −10 V, f = 1 MHz  
⎯
0.65  
⎯
= 10 V, f = 100 MHz (Figure 1)  
= 10 V, f = 100 MHz (Figure 1)  
⎯
24  
1.8  
Noise figure  
NF  
⎯
3.5  
Note: I  
classificatopn Y: 3.0~7.0 mA, GR (R): 6.0~14.0 mA, BL (L): 12.0~24.0 mA  
DSS  
1
2007-11-01  
123456

中文翻译

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