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2SK2113 PDF预览

2SK2113

更新时间: 2024-11-17 23:20:39
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其他 - ETC /
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2页 12K
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2SK2113 数据手册

 浏览型号2SK2113的Datasheet PDF文件第2页 
2SK2113  
GaAs HEMT  
Application  
UHF low noise amplifier  
CMPAK–4  
4
Features  
3
1
• HEMT structure  
• Excellent low noise characteristics  
NF=0.8dB typ (f=900MHz)  
• High gain  
Ga=18dB typ (f=900MHz)  
• Small package (CMPAK-4)  
2
1. Source  
2. Drain  
3. Source  
4. Gate  
Table 1 Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Drain to source voltage  
V
3.5  
V
DS  
———————————————————————————————————————————  
Gate to source voltage  
V
–3  
V
GSO  
———————————————————————————————————————————  
Gate to drain voltage  
V
–3  
V
GDO  
———————————————————————————————————————————  
Drain current  
I
60  
mA  
D
———————————————————————————————————————————  
Channel power dissipation  
Pch  
100  
mW  
———————————————————————————————————————————  
Channel temperature  
Tch  
125  
°C  
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +125  
°C  
———————————————————————————————————————————  

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