Datasheet > 2SK2115

2SK2115

更新时间： 2024-09-14 23:20:39

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数据手册

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2SK2115 数据手册

2SK2114, 2SK2115

Silicon N Channel MOS FET

Application

TO–220CFM

High speed power switching

Features

• Low on–resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for Switching regulator

1. Gate

2. Drain

3. Source

Table 1 Ordering Information

Type No.

DSS

————————————————————

2SK2114

450 V

————————————————————

2SK2115

500 V

————————————————————

Table 2 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

2SK2114

450

DSS

—————

2SK2115

———

500

DSS

———————————————————————————————————————————

Gate to source voltage

±30

GSS

———————————————————————————————————————————

Drain current

———————————————————————————————————————————

Drain peak current

D(pulse)

———————————————————————————————————————————

Body–drain diode reverse drain current

———————————————————————————————————————————

Channel dissipation

Pch**

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

PW ≤ 10 µs, duty cycle ≤ 1 %

** Value at Tc = 25 °C

12 3

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