Datasheet > 2SK2111

2SK2111

更新时间： 2024-11-05 06:23:35

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
1页	46K
描述
MOS Field Effect Transistor

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中文翻译

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数据手册

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2SK2111 数据手册

SMD Type

MOSFICET

MOS Field Effect Transistor

2SK2111

SOT-89

Unit: mm

+0.1

4.50

-0.1

+0.1

1.50

-0.1

Features

+0.1

1.80

-0.1

Low on-resistance

R^DS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A

High switching speed

0.53

+0.1

0.48

-0.1

+0.1

-0.1

+0.1

0.44

-0.1

1 Gate

1. Source

1. Base

+0.1

3.00

-0.1

2 Drain

2. Drain

2. Collector

3 Source

3. Emiitter

3. Gate

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

1.0

Drain current

I^dp

2.0

Power dissipation

P^D

2.0

Channel temperature

T^ch

150

Storage temperature

Tstg

-55 to +150

* 16 cm²X0.7mm,ceramic substrate used

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Symbol

I^DSS

I^GSS

V^GS(th)VDS=10V,ID=1mA

Testconditons

Min

Typ

Max

1.0

Unit

VDS=60V,VGS=0

Gate leakage current

Gate threshold voltage

Forward transfer admittance

VGS= 20V,VDS=0

0.8

0.4

1.4

2.0

VDS=10V,ID=0.5A

V^GS=4.0V,ID=0.5A

VGS=10V,ID=0.5A

Yfs

0.32

0.6

Drain to source on-state resistance

R^DS(on)

0.24 0.45

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Ciss

C^oss

C^rss

t^d(on)

170

V^DS=10V,VGS=0,f=1MHZ

2.8

2.3

I^D=0.5A,VGS(on)=10V,RL=50 ,RG=10

,VDD=25V

Turn-off delay time

Fall time

t^d(off)

Marking

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2SK2113YY	RENESAS	获取价格	RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Ch
2SK2113YY-TL	RENESAS	获取价格	RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Ch
2SK2113YY-TR	RENESAS	获取价格	RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Ch
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