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2SK210-GRTE85L

更新时间： 2024-11-20 14:39:27
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
6页 342K
描述
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236, FET RF Small Signal

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中文翻译

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2SK210-GRTE85L 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknownHTS代码：8541.21.00.95
风险等级：5.12Is Samacsys：N
配置：SINGLEFET 技术：JUNCTION
最大反馈电容 (Crss)：0.65 pF最高频带：VERY HIGH FREQUENCY BAND
JEDEC-95代码：TO-236JESD-30 代码：R-PDSO-G3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：DEPLETION MODE
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

2SK210-GRTE85L 数据手册

 浏览型号2SK210-GRTE85L的Datasheet PDF文件第2页浏览型号2SK210-GRTE85L的Datasheet PDF文件第3页浏览型号2SK210-GRTE85L的Datasheet PDF文件第4页浏览型号2SK210-GRTE85L的Datasheet PDF文件第5页浏览型号2SK210-GRTE85L的Datasheet PDF文件第6页 
2SK210  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK210  
FM Tuner Applications  
VHF Band Amplifier Applications  
Unit: mm  
•
•
•
High power gain: G = 24dB (typ.) (f = 100 MHz)  
PS  
Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)  
High forward transfer admittance: |Y | = 7 mS (typ.) (f = 1 kHz)  
fs  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
−18  
10  
V
GDO  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
100  
D
T
j
125  
T
stg  
−55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
SC-59  
TOSHIBA  
2-3F1C  
Weight: 0.012 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
= −1.0 V, V = 0 V  
DS  
⎯
⎯
⎯
−10  
nA  
V
GSS  
GS  
Gate-drain breakdown voltage  
V
I
= −100 μA  
−18  
⎯
(BR) GDO  
G
I
DSS  
(Note)  
Drain current  
V
= 0 V, V = 10 V  
DS  
3
⎯
24  
mA  
GS  
Gate-source cut-off voltage  
Forward transfer admittance  
Input capacitance  
V
V
V
V
V
V
V
= 10 V, I = 1 μA  
−1.2  
⎯
−3  
7
⎯
⎯
V
GS (OFF)  
⎪Y ⎪  
DS  
GS  
DS  
GD  
DD  
DD  
D
= 0 V, V = 10 V, f = 1 kHz  
DS  
mS  
pF  
pF  
dB  
dB  
fs  
C
= 10 V, V  
= 0, f = 1 MHz  
GS  
⎯
3.5  
⎯
⎯
iss  
rss  
PS  
Reverse transfer capacitance  
Power gain  
C
G
= −10 V, f = 1 MHz  
⎯
0.65  
⎯
= 10 V, f = 100 MHz (Figure 1)  
= 10 V, f = 100 MHz (Figure 1)  
⎯
24  
1.8  
Noise figure  
NF  
⎯
3.5  
Note: I  
classificatopn Y: 3.0~7.0 mA, GR (R): 6.0~14.0 mA, BL (L): 12.0~24.0 mA  
DSS  
1
2007-11-01  
123456

中文翻译

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