Datasheet > 2SK2112

2SK2112

更新时间： 2024-09-15 12:53:23

品牌	Logo	应用领域
TYSEMI		晶体开关晶体管脉冲
页数	文件大小	规格书
1页	114K
描述
Low on-resistance RDS(on)=1.2 MAX. VGS=4.0V,ID=0.5A High switching speed

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2SK2112 数据手册

SSMMDDTTyyppee

MOSFICET

Product specification

2SK2112

SOT-89

Unit: mm

Features

+0.1

4.50

-0.1

+0.1

1.50

-0.1

+0.1

1.80

-0.1

Low on-resistance

R^DS(on)=1.2 MAX.@V^GS=4.0V,I^D=0.5A

High switching speed

0.53

+0.1

0.48

-0.1

+0.1

-0.1

+0.1

0.44

-0.1

1 Gate

1. Source

1. Base

+0.1

3.00

-0.1

2 Drain

2. Drain

2. Collector

3 Source

3. Emiitter

3. Gate

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

100

Unit

Gate to source voltage

1.0

Drain current

I^dp

2.0

Power dissipation

P^D

2.0

Channel temperature

T^ch

150

Storage temperature

T^stg

-55 to +150

* 16 cm²X0.7mm,ceramic substrate used

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Symbol

I^DSS

I^GSS

V^GS(th)V^DS=10V,I^D=1mA

Testconditons

V^DS=100V,V^GS=0

VGS= 20V,VDS=0

Min

Typ

1.4

Max

1.0

Unit

Gate leakage current

Gate threshold voltage

Forward transfer admittance

0.8

0.4

2.0

V^DS=10V,I^D=0.5A

V^GS=4.0V,ID=0.5A

VGS=10V,ID=0.5A

Y^fs

0.58

0.50

170

1.2

0.8

Drain to source on-state resistance

R^DS(on)

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C^iss

C^oss

C^rss

t^d(on)

V^DS=10V,V^GS=0,f=1MHZ

2.9

1.7

I^D=0.5A,V^GS(on)=10V,R^L=50 ,R^G=10

,V^DD=25V

Turn-off delay time

Fall time

t^d(off)

Marking

http://www.twtysemi.com

sales@twtysemi.com

1 of 1

4008-318-123

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