Datasheet > 2SJ600

2SJ600

更新时间： 2024-11-18 06:24:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
2页	51K
描述
MOS Field Effect Transistor

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中文翻译

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数据手册

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2SJ600 数据手册

SMD Type

MOSFICET

MOS Field Effect Transistor

2SJ600

Features

TO-252

Unit: mm

Low on-resistance

+0.15

-0.15

+0.1

2.30

-0.1

6.50

RDS(on)1 = 50 m MAX. (VGS =-10 V, ID = -13 A)

RDS(on)2 = 79m MAX. (VGS = -4.0 V, ID =-13 A)

Low Ciss: Ciss = 1900 pF TYP.

Built-in gate protection diode

+0.2

5.30

-0.2

+0.8

0.50

-0.7

0.127

max

+0.1

0.80

-0.1

1 Gate

+0.1

0.60

-0.1

2.3

4.60

2 Drain

3 Source

+0.15

-0.15

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current (DC)

Symbol

VDSS

VGSS

Rating

Unit

-60

Drain current(pulse) *

Power dissipation

TC=25

TA=25

1.0

Channel temperature

Storage temperature

Tch

150

Tstg

-55 to +150

* PW 10 s, duty cycle

1 %

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与2SJ600相关器件

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2SJ600-AZ	NEC	获取价格	暂无描述
2SJ600-Z	NEC	获取价格	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ600-Z	KEXIN	获取价格	P-Channel MOSFET
2SJ600-Z-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 25A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-
2SJ601	RENESAS	获取价格	36000mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251, TO-251, MP-3, 3 PIN
2SJ601	NEC	获取价格	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ601	KEXIN	获取价格	MOS Field Effect Transistor
2SJ601(0)-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,36A I(D),TO-251VAR
2SJ601(0)-Z-AZ	RENESAS	获取价格	Pch Single Power MOSFET -60V -36A 31mohm MP-3Z/TO-252
2SJ601(0)-Z-E1-AY	RENESAS	获取价格	Pch Single Power MOSFET -60V -36A 31mohm MP-3Z/TO-252