Datasheet > 2SJ601

2SJ601

更新时间： 2024-11-18 06:24:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
2页	51K
描述
MOS Field Effect Transistor

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中文翻译

获取价格

数据手册

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2SJ601 数据手册

SMD Type

MOSFICET

MOS Field Effect Transistor

2SJ601

TO-252

Unit: mm

Features

+0.15

-0.15

+0.1

2.30

-0.1

6.50

Low on-resistance

+0.2

5.30

-0.2

+0.8

0.50

-0.7

RDS(on)1 = 31 m MAX. (VGS =-10 V, ID = -18 A)

RDS(on)2 = 46m MAX. (VGS = -4.0 V, ID =-18 A)

Low Ciss: Ciss = 3300 pF TYP.

Built-in gate protection diode

0.127

max

+0.1

0.80

-0.1

1 Gate

+0.1

0.60

-0.1

2.3

4.60

2 Drain

3 Source

+0.15

-0.15

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current (DC)

Symbol

VDSS

VGSS

Rating

Unit

-60

Drain current(pulse) *

120

Power dissipation

TC=25

TA=25

1.0

Channel temperature

Storage temperature

Tch

150

Tstg

-55 to +150

* PW 10 s, duty cycle

1 %

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