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2SJ601-Z-AZ PDF预览

2SJ601-Z-AZ

更新时间: 2024-02-26 08:10:54
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
8页 170K
描述
Small Signal Field-Effect Transistor, 36A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, TO-252, MP-3Z, 3 PIN

2SJ601-Z-AZ 技术参数

生命周期:Transferred零件包装代码:TO-252AB
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.12
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):36 A最大漏源导通电阻:0.046 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ601-Z-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ601  
SWITCHING  
P-CHANNEL POWER MOS FET  
ORDERING INFORMATION  
DESCRIPTION  
The 2SJ601 is P-channel MOS Field Effect Transistor designed  
PART NUMBER  
PACKAGE  
for solenoid, motor and lamp driver.  
2SJ601  
TO-251 (MP-3)  
TO-252 (MP-3Z)  
2SJ601-Z  
FEATURES  
Low on-state resistance:  
RDS(on)1 = 31 mMAX. (VGS = –10 V, ID = –18 A)  
RDS(on)2 = 46 mMAX. (VGS = –4.0 V, ID = –18 A)  
Low input capacitance:  
Ciss = 3300 pF TYP. (VDS = –10 V, VGS = 0 V)  
Built-in gate protection diode  
TO-251/TO-252 package  
(TO-251)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
PT  
Tch  
Tstg  
IAS  
–60  
m20  
m36  
m120  
65  
1.0  
V
V
A
A
W
W
°C  
°C  
A
(TO-252)  
150  
–55 to +150  
–35  
Storage Temperature  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
EAS  
123  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 , VGS = –20 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D14646EJ4V0DS00 (4th edition)  
Date Published August 2004 NS CP(K)  
Printed in Japan  
The mark  
shows major revised points.  
2000, 2001  

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