是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 36 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 65 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ602 | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
2SJ602 | KEXIN |
获取价格 |
MOS Field Effect Transistor | |
2SJ602 | RENESAS |
获取价格 |
20A, 60V, 0.107ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN | |
2SJ602(0)-S-AZ | RENESAS |
获取价格 |
2SJ602(0)-S-AZ | |
2SJ602(0)-Z-AZ | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,20A I(D),TO-263ABVAR | |
2SJ602(0)-Z-E1-AZ | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,20A I(D),TO-263ABVAR | |
2SJ602(0)-Z-E2-AZ | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,20A I(D),TO-263ABVAR | |
2SJ602(0)-ZJ-AZ | RENESAS |
获取价格 |
2SJ602(0)-ZJ-AZ | |
2SJ602(0)-ZJ-E1-AZ | RENESAS |
获取价格 |
2SJ602(0)-ZJ-E1-AZ | |
2SJ602(0)-ZJ-E2-AZ | RENESAS |
获取价格 |
2SJ602(0)-ZJ-E2-AZ |