是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
零件包装代码: | MP-3 | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.16 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 36 A |
最大漏极电流 (ID): | 36 A | 最大漏源导通电阻: | 0.046 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 65 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SJ601 | RENESAS |
完全替代 |
36000mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251, TO-251, MP-3, 3 PIN |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ601-Z | NEC |
获取价格 |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SJ601-Z | RENESAS |
获取价格 |
36000mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB, TO-252, MP-3Z, 3 PIN | |
2SJ601-Z-AZ | RENESAS |
获取价格 |
暂无描述 | |
2SJ601-Z-AZ | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 36A I(D), 60V, 1-Element, P-Channel, Silicon, Metal- | |
2SJ601-Z-E2-AZ | RENESAS |
获取价格 |
Pch Single Power MOSFET -60V -36A 31mohm MP-3Z/TO-252 | |
2SJ601-ZK | RENESAS |
获取价格 |
Pch Single Power Mosfet -60V -36A 31Mohm Mp-3Zk/To-252 | |
2SJ601-ZK-E1-AY | RENESAS |
获取价格 |
Pch Single Power MOSFET -60V -36A 31mohm MP-3ZK/TO-252 | |
2SJ601-ZK-E2-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,36A I(D),TO-252VAR | |
2SJ602 | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
2SJ602 | KEXIN |
获取价格 |
MOS Field Effect Transistor |