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2SJ601-AZ PDF预览

2SJ601-AZ

更新时间: 2024-10-30 14:50:47
品牌 Logo 应用领域
瑞萨 - RENESAS 开关晶体管
页数 文件大小 规格书
10页 232K
描述
Pch Single Power MOSFET -60V -36A 31mohm MP-3/TO-251

2SJ601-AZ 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:MP-3包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.16配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):36 A
最大漏极电流 (ID):36 A最大漏源导通电阻:0.046 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):65 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ601-AZ 数据手册

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To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

2SJ601-AZ 替代型号

型号 品牌 替代类型 描述 数据表
2SJ601 RENESAS

完全替代

36000mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251, TO-251, MP-3, 3 PIN

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SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
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暂无描述
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TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,36A I(D),TO-252VAR
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MOS Field Effect Transistor