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2SJ600-AZ PDF预览

2SJ600-AZ

更新时间: 2024-11-20 13:04:27
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2SJ600-AZ 数据手册

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PRELIMINARY DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ600  
SWITCHING  
P-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
The 2SJ600 is P-channel MOS Field Effect Transistor designed  
for solenoid, motor and lamp driver.  
PART NUMBER  
2SJ600  
PACKAGE  
TO-251  
2SJ600-Z  
TO-252  
FEATURES  
Low on-state resistance:  
RDS(on)1 = 50 mMAX. (VGS = –10 V, ID = –13 A)  
RDS(on)2 = 79 mMAX. (VGS = –4.0 V, ID = –13 A)  
Low Ciss: Ciss = 1900 pF TYP.  
Built-in gate protection diode  
TO-251/TO-252 package  
(TO-251)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
–60  
V
V
+
+
+
20  
25  
70  
A
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
45  
W
W
°C  
(TO-252)  
PT  
1.0  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150 °C  
Single Avalanche Current Note2  
IAS  
–25  
A
Single Avalanche Energy Note2  
EAS  
62.5  
mJ  
Notes 1. PW 10 µs, Duty cycle 1%  
2. Starting Tch = 25°C, RG = 25 , VGS = –20 V 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published November 2000 NS CP(K)  
Printed in Japan  
D14645EJ1V0DS00 (1st edition)  
2000  
©

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