Datasheet > 2SJ600-Z

2SJ600-Z

更新时间： 2024-06-27 12:13:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	938K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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2SJ600-Z 数据手册

SMD Type

MOSFET

P-Channel MOSFET

2SJ600-Z

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

■ Features

+0.2

5.30

-0.2

0.50

● VDS (V) =-60V

● ID =-25A

● R^DS(ON)＜ 50mΩ (VGS =-10V)

● R^DS(ON)＜ 79mΩ (VGS =-4V)

● Low Ciss: Ciss = 1900 pF (TYP.)

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Gate

2.3

4.60

+0.15

-0.15

2 Drain

3 Source

Drain

Body

Diode

Gate

Protection

Diode

Source

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-60

Unit

Gate-Source Voltage

±20

-25

Continuous Drain Current

Pulsed Drain Current (Note.1)

Single Avalanche Current (Note.2)

-70

-25

Tc = 25℃

Ta = 25℃

Power Dissipation

℃

Single Avalanche Energy

Junction Temperature

(Note.2)

62.5

150

Junction Storage Temperature Range

stg

-55 to 150

Note.1: PW ≤ 10us,Duty Cycle ≤ 1%

Note.2: Starting TJ = 25 °C, RG = 25Ω , VGS = –20 V → 0

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