Datasheet > 2SJ601

2SJ601

更新时间： 2024-02-20 07:11:18

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管开关
页数	文件大小	规格书
4页	57K
描述
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

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技术参数
数据手册

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2SJ601 技术参数

生命周期：	Transferred	零件包装代码：	TO-252AB
包装说明：	SMALL OUTLINE, R-PSSO-G2	针数：	4
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.12
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	36 A	最大漏源导通电阻：	0.046 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-252AB
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SJ601 数据手册

PRELIMINARY DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ601

SWITCHING

P-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

ORDERING INFORMATION

The 2SJ601 is P-channel MOS Field Effect Transistor designed

for solenoid, motor and lamp driver.

PART NUMBER

2SJ601

PACKAGE

TO-251

2SJ601-Z

TO-252

FEATURES

• Low on-state resistance:

R^DS(on)1= 31 mΩ MAX. (V^GS= –10 V, I^D= –18 A)

R^DS(on)2= 46 mΩ MAX. (V^GS= –4.0 V, I^D= –18 A)

• Low C^iss: C^iss= 3300 pF TYP.

• Built-in gate protection diode

• TO-251/TO-252 package

(TO-251)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^GS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

–60

120

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

°C

(TO-252)

P^T

1.0

T^ch

150

Storage Temperature

T^stg

–55 to +150 °C

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

I^AS

–35

123

E^AS

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%

2. Starting T^ch= 25°C, R^G= 25 Ω, V^GS= –20 V → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

D14646EJ1V0DS00 (1st edition)

Date Published November 2000 NS CP(K)

Printed in Japan

2000

12 3 4

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2SJ601-AZ	NEC	Small Signal Field-Effect Transistor, 36A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-	获取价格
2SJ601-Z	NEC	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE	获取价格