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2SJ418 PDF预览

2SJ418

更新时间: 2024-11-23 22:05:11
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管
页数 文件大小 规格书
4页 130K
描述
Ultrahigh-Speed Switching Applications

2SJ418 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):8 A
最大漏源导通电阻:0.145 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
功耗环境最大值:30 W最大功率耗散 (Abs):30 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ418 数据手册

 浏览型号2SJ418的Datasheet PDF文件第2页浏览型号2SJ418的Datasheet PDF文件第3页浏览型号2SJ418的Datasheet PDF文件第4页 
Ordering number:ENN5298A  
P-Channel Silicon MOSFET  
2SJ418  
Ultrahigh-Speed Switching Applications  
Fe
·
·
·
P  
FA  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
60100TS (KOTO) TA-2630 No.5298–1/4  

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