是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 8 A |
最大漏源导通电阻: | 0.145 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-251 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
功耗环境最大值: | 30 W | 最大功率耗散 (Abs): | 30 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ418TP | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | TO-251VAR | |
2SJ418TP-FA | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | TO-252VAR | |
2SJ419 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications | |
2SJ420 | SANYO |
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Ultrahigh-Speed Switching Applications | |
2SJ421 | SANYO |
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Very High-Speed Switching Applications | |
2SJ424 | SANKEN |
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MOSFET | |
2SJ425 | SANKEN |
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MOSFET | |
2SJ426 | SANKEN |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Meta | |
2SJ437 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 35A I(D) | |
2SJ438 | TOSHIBA |
获取价格 |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND M |