2SJ411-AZ

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2SJ411-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ411

P-CHANNEL SIGNAL MOS FET

FOR SWITCHING

The 2SJ411 is a P-channel MOS FET of a vertical type and is

PACKAGE DIMENSIONS (in mm)

7.0 MAX.

1.2

a switching element that can be directly driven by the output of an

IC operating at 5 V.

This product has a low ON resistance and superb switching

characteristics and is ideal for power control switches and DC/DC

converters.

0.8 ±0.1

0.6 ±0.1

FEATURES

0.6 ±0.1

•

Radial taping supported

Can be directly driven by 5-V IC

Low ON resistance

0.55 ±0.1

1.71.7

G D S

R^DS(on)= 0.24 Ω MAX. @VGS = –4 V, ID = –2.5 A

R^DS(on)= 0.11 Ω MAX. @VGS = –10 V, ID = –2.5 A

EQUIVALENT CIRCUIT

Drain (D)

Internal

Diode

Gate (G)

Gate

CONNECTIONS

G: Gate

D: Drain

S: Source

Source (S)

Protection

Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

SYMBOL

VDSS

TEST CONDITIONS

RATING

–30

UNIT

VGS = 0

VDS = 0

VGSS

–20/+10

±5.0

ID(DC)

Drain Current (Pulse)

ID(pulse)

PW ≤ 10 µs

±20.0

Duty cycle ≤ 1 %

Total Power Dissipation

Channel Temperature

Storage Temperature

PT1

PT2

Tch

Tstg

TA = 25 ˚C

TC = 25 ˚C

1.0

6.0

˚C

150

–55 to +150

The internal diode connected between the gate and source of this product is to protect the product from static

electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect

a protection circuit.

The information in this document is subject to change without notice.

Document No. D11219EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

1996

12 3 4 5 6

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