DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ411
P-CHANNEL SIGNAL MOS FET
FOR SWITCHING
The 2SJ411 is a P-channel MOS FET of a vertical type and is
PACKAGE DIMENSIONS (in mm)
7.0 MAX.
1.2
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for power control switches and DC/DC
converters.
0.8 ±0.1
0.6 ±0.1
FEATURES
0.6 ±0.1
0.6 ±0.1
•
•
•
Radial taping supported
Can be directly driven by 5-V IC
Low ON resistance
0.55 ±0.1
1.71.7
G D S
RDS(on) = 0.24 Ω MAX. @VGS = –4 V, ID = –2.5 A
RDS(on) = 0.11 Ω MAX. @VGS = –10 V, ID = –2.5 A
EQUIVALENT CIRCUIT
Drain (D)
Internal
Diode
Gate (G)
Gate
PIN
CONNECTIONS
G: Gate
D: Drain
S: Source
Source (S)
Protection
Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
SYMBOL
VDSS
TEST CONDITIONS
RATING
–30
UNIT
VGS = 0
VDS = 0
V
V
A
A
VGSS
–20/+10
±5.0
ID(DC)
Drain Current (Pulse)
ID(pulse)
PW ≤ 10 µs
±20.0
Duty cycle ≤ 1 %
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
PT1
PT2
Tch
Tstg
TA = 25 ˚C
TC = 25 ˚C
1.0
6.0
W
W
˚C
˚C
150
–55 to +150
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
The information in this document is subject to change without notice.
Document No. D11219EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996