2SJ411-AZ

更新时间： 2024-01-29 16:48:25

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
6页	72K
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数据手册

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2SJ411-AZ 数据手册

2SJ411

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER

Drain Cut-Off Current

SYMBOL

IDSS

TEST CONDITIONS

VDS = –30 V, VGS = 0

MIN.

TYP.

–1.4

MAX.

–10

UNIT

µA

Gate Leakage Current

IGSS

VGS = –16/+10 V, VDS = 0

VDS = –10 V, ID = –1 mA

VDS = –10 V, ID = –2.5 A

VGS = –4 V, ID = –2.5 A

VGS = –10 V, ID = –2.5 A

±10

Gate Cut-Off Voltage

VGS(off)

|yfs|

–1.0

3.0

–2.0

Forward Transfer Admittance

Drain to Source On-State Resistance

Input Capacitance

RDS(on)1

RDS(on)2

Ciss

0.175

0.096

790

580

280

0.24

0.11

Ω

VDS = –10 V, VGS = 0

f = 1.0 MHz

Output Capacitance

Coss

Crss

Reverse Transfer Capacitance

Turn-On Delay Time

td(on)

VDD = –15 V, ID = –2.5 A

VGS(on) = –10 V

Rise Time

110

195

185

29.8

2.7

RG = 10 Ω, RL = 6 Ω

Turn-Off Delay Time

td(off)

Fall Time

Gate Input Charge

VDS = –24 V

VGS = –10 V

Gate to Source Charge

Gate to Drain Charge

QGS

QGD

VF(S-D)

trr

ID = –5.0 A, IG = –2 mA

11.5

1.0

Internal Diode Forward Voltage

Internal Diode Reverse Recovery Time

Internal Diode Reverse Recovery Charge

IF = 5.0 A, VGS = 0

140

160

di/dt = 50 A/µs

Qrr

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

FORWARD BIAS SAFE OPERATING AREA

–100

–50

100

^D(pulse)= –20 A

–20

–10

–5

^D(DC)= –5 A

–2

–1

–0.5

= 25 ˚C

–0.2

–0.1

Single pulsed

100

125

150

–1 –2

–5

–10 –20

–50 –100

- Ambient Temperature - ˚C

DS - Drain to Source Voltage - V

123 4 5 6

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