Datasheet > 2SJ412_09

2SJ412_09

更新时间： 2022-12-18 10:43:08

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器继电器电机 DC-DC转换器
页数	文件大小	规格书
6页	190K
描述
DC-DC Converter, Relay Drive and Motor Drive Applications

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2SJ412_09 数据手册

2SJ412

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²-π-MOSV)

2SJ412

DC-DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

•

4-V gate drive

Low drain-source ON resistance: R

= 0.15 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 7.7 S (typ.)

Low leakage current: I

= −100 μA (max) (V

= −100 V)

DSS

Enhancement mode: V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−100

±20

−16

−64

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

JEDEC

JEITA

―

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

TOSHIBA

2-10S1B

292

Weight: 1.5 g (typ.)

(Note 2)

Avalanche current

−16

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

JEDEC

JEITA

―

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

2.08

83.3

°C/W

th (ch-c)

TOSHIBA

2-10S2B

th (ch-a)

Weight: 1.5 g (typ.)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = −25 V, T = 25°C (initial), L = 1.84 mH, R = 25 Ω, I = −16 A

Note 3: Repetitive rating: pulse width limited by maximum junction temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-09-29

12 3 4 5 6

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