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2SJ412_09

更新时间： 2024-11-20 05:56:11
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器转换器继电器电机DC-DC转换器
页数 文件大小 规格书
6页 190K
描述
DC-DC Converter, Relay Drive and Motor Drive Applications

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2SJ412_09 数据手册

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2SJ412  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)  
2SJ412  
DC-DC Converter, Relay Drive and Motor Drive  
Applications  
Unit: mm  
•
•
•
•
•
4-V gate drive  
Low drain-source ON resistance: R  
= 0.15 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 7.7 S (typ.)  
fs  
Low leakage current: I  
= −100 μA (max) (V  
= −100 V)  
DS  
DSS  
Enhancement mode: V = −0.8 to −2.0 V (V  
= −10 V, I = −1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
−100  
−100  
±20  
−16  
−64  
60  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
JEDEC  
JEITA  
―
―
D
Drain current  
A
I
DP  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
W
D
AS  
AR  
TOSHIBA  
2-10S1B  
E
292  
mJ  
Weight: 1.5 g (typ.)  
(Note 2)  
Avalanche current  
I
−16  
6
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
stg  
−55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage,  
etc.) are within the absolute maximum ratings. Please design the  
appropriate reliability upon reviewing the Toshiba Semiconductor  
Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Thermal Characteristics  
JEDEC  
JEITA  
―
―
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
2.08  
83.3  
°C/W  
°C/W  
th (ch-c)  
TOSHIBA  
2-10S2B  
R
th (ch-a)  
Weight: 1.5 g (typ.)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = −25 V, T = 25°C (initial), L = 1.84 mH, R = 25 Ω, I = −16 A  
AR  
V
DD  
ch  
G
Note 3: Repetitive rating: pulse width limited by maximum junction temperature  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2009-09-29  
123456

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