Datasheet > 2SJ413

2SJ413

更新时间： 2024-02-13 07:50:03

品牌	Logo	应用领域
三洋 - SANYO		开关
页数	文件大小	规格书
4页	82K
描述
Ultrahigh-Speed Switching Applications

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技术参数
数据手册

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2SJ413 技术参数

生命周期：	Obsolete	零件包装代码：	TO-3PML
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.84
其他特性：	HIGH RELIABILITY	外壳连接：	ISOLATED
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	50 A	最大漏极电流 (ID)：	50 A
最大漏源导通电阻：	0.03 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	70 W
最大脉冲漏极电流 (IDM)：	200 A	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SJ413 数据手册

Ordering number:ENN5366A

P-Channel Silicon MOSFET

2SJ413

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

· Low ON resistance.

unit:mm

2076B

[2SJ413]

· Ultrahigh-speed switching.

· Low-voltage drive.

· Micaless package facilitating mounting.

16.0

5.6

3.4

3.1

2.8

2.0

1.0

0.6

1 : Gate

2 : Drain

3 : Source

5.45

SANYO : TO-3PML

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

–60

±20

–50

–200

3.0

DSS

Gate-to-Source Voltage

Drain Current (DC)

GSS

PW≤10µs, duty cycle≤1%

Drain Current (Pulse)

˚C

Allowable Power Dissipation

Tc=25˚C

Channel Temperature

Storage Temperature

Tch

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

–60

max

Drain-to-Source Breakdown Voltage

Gate-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=–1mA, V =0

D GS

(BR)DSS

=±100µA, V =0

±20

(BR)GSS

=–60V, V =0

=±16V, V =0

–100

±10

µA

DSS

GSS

(off)

=–10V, I =–1mA

=–10V, I =–25A

=–25A, V =–10V

–1.0

–2.0

Forward Transfer Admittance

| yfs |

mΩ

DS(on)

Static Drain-to-Source On-State Resistance

=–25A, V =–4V

Marking : JE

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

60100TS (KOTO) TA-2633 No.5366–1/4

12 3 4

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