Datasheet > 2SJ305TE85R

2SJ305TE85R

更新时间： 2024-01-18 11:19:22

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
5页	317K
描述
TRANSISTOR 200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, FET General Purpose Small Signal

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技术参数
数据手册

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2SJ305TE85R 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.74
Is Samacsys：	N	配置：	SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	0.2 A
最大漏源导通电阻：	4 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-236	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SJ305TE85R 数据手册

2SJ305

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ305

High Speed Switching Applications

Analog Applications

Unit: mm

•

High input impedance

Low gate threshold voltage.: V = −0.5~−1.5 V

Excellent switching times.: t = 0.06 μs (typ.)

off

= 0.15 μs (typ.)

•

Low drain-source ON resistance: R

= 2.4 Ω (typ.)

DS (ON)

Small package.

Complementary to 2SK2009

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−30

±20

Gate-source voltage

DC drain current

GSS

JEDEC

JEITA

TO-236MOD

−200

200

°C

SC-59

Drain power dissipation

Channel temperature

Storage temperature range

stg

TOSHIBA

2-3F1F

150

Weight: 0.012 g (typ.)

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note: This transistor is electrostatic sensitive device.

Please handle with caution.

Marking

Equivalent Circuit

2007-11-01

12 3 4 5

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