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2SJ312 PDF预览

2SJ312

更新时间: 2024-11-16 22:21:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体驱动器转换器开关继电器晶体管电机DC-DC转换器
页数 文件大小 规格书
5页 288K
描述
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

2SJ312 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220FL针数:3
Reach Compliance Code:unknown风险等级:5.59
Is Samacsys:N其他特性:LOGIC LEVEL COMPATIBLE
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):14 A
最大漏源导通电阻:0.19 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):240极性/信道类型:P-CHANNEL
功耗环境最大值:40 W认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ312 数据手册

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TRANSISTOR 14 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
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2SJ312S1B
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TRANSISTOR 14 A, 60 V, 0.19 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
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获取价格

TRANSISTOR 14 A, 60 V, 0.19 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power