Datasheet > 2SD2696

2SD2696

更新时间： 2024-11-03 04:26:19

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
2页	54K
描述
Low frequency transistor (for amplification)

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2SD2696 数据手册

2SD2696

Transistors

Low frequency transistor (for amplification)

2SD2696

zStructure

zExternal dimensions (Unit : mm)

NPN Silicon Epitaxial Planar Transistor

VMT3

1.2

0.32

zFeatures

(3)

1) The transistor of 400mA class which went only with 2012

size conventionally is attained in 1208 size.

2) Collector saturation voltage is low.

(

)( )

0.22

0.13

0.4 0.4

0.5

0.8

V^{CE (sat)}: max. 300mA at IC = 100mA / IB = 2mA

(1) Base

(2) Emitter

(3) Collector

Abbreviated symbol : UH

zApplications

Switching

zPackaging specifications

zInner circuit

Package

Taping

T2L

(3) Collector

Type

Code

Basic ordering unit (pieces)

8000

2SD2696

(1) Base

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Limits

Unit

(2) Emitter

400

Collector current

∗1

I_CP

P_D

800

∗2

Power dissipation

150

mW / TOTAL

Junction temperature

150

°C

Range of storage temperature

∗1 Pw=10ms, Single pulse

Tstg

−55 to +150

∗2 Each terminal mounted on a recommended land.

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

Unit

Collector-emitter breakdown voltage BV_CEO

−

100

300

680

−

I_C=1mA

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

BV_CBO

BV_EBO

I_CBO

I_C=10µA

I_E=10µA

−

270

_CB= 30V

I_EBO

V_EB= 6V

V_{CE (sat)}

h_FE

120

mV I_C=100mA, I_B= 2mA

−

400

3.0

−

MHz

_CE=2V, I_C=100mA

Transition frequency

f_T

−

_CE=2V, I_E= −100mA, f=100MHz

_CB=10V, I_E= 0A, f=1MHz

Output capacitance

C_ob

−

1/1

中文翻译

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