2SD2703

更新时间： 2024-11-02 21:54:39

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
3页	90K
描述
General purpose amplification (30V, 1A)

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中文翻译

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数据手册

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2SD2703 数据手册

2SD2703

Transistors

General purpose amplification (30V, 1A)

2SD2703

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

(2)

(3)

zFeatures

(1)

1) A collector current is large.

2) Collector saturation voltage is low.

V^CE(sat)≦ 350mV

0.2

1.7

2.1

0.2

At I^C= 500mA / IB = 25mA

0.15Max.

ROHM : TUMT3 Abbreviated symbol : EU

(1) Base

(2) Emitter

(3) Collector

zPackaging specifications

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

Package

Taping

VCBO

VCEO

VEBO

Type

Code

Basic ordering unit (pieces)

3000

2SD2703

Collector current

∗1

0.4

Power dissipation

∗2

0.8

Junction temperature

150

°C

Range of storage temperature Tstg

−55 to +150

∗

1Single pulse, P

∗

=1ms

2Mounted on a 25

25× ^t0.8mm Ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

BVCBO

−

=10µA

=1mA

Collector-emitter breakdown voltage BVCEO

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

BVEBO

−

=10µA

CBO

EBO

CE(sat)

−

100

CB=30V

−

VEB=6V

Collector-emitter saturation voltage

DC current gain

−

120 350 mV

=500mA/25mA

=2V/100mA

CE=2V, I =−100mA, f=100MHz

CB=10V, I =0A, f=1MHz

∗

270

−

320

680

−

CE/IC

Transition frequency

MHz

Corrector output capacitance

Cob

−

∗ Pulsed

Rev.A

1/2

12 3

中文翻译

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