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2SD2712 PDF预览

2SD2712

更新时间： 2024-11-03 04:26:19
品牌 Logo 应用领域
三洋 - SANYO 晶体晶体管达林顿晶体管
页数 文件大小 规格书
3页 35K
描述
NPN Triple Diffused Planar Silicon Darlington Transistor

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中文翻译

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2SD2712 技术参数

生命周期：Transferred零件包装代码：TO-3PB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.46
Is Samacsys：N最大集电极电流 (IC)：10 A
集电极-发射极最大电压：160 V配置：SINGLE
最小直流电流增益 (hFE)：5000JESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN最大功率耗散 (Abs)：110 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：15 MHz
Base Number Matches：1

2SD2712 数据手册

 浏览型号2SD2712的Datasheet PDF文件第2页浏览型号2SD2712的Datasheet PDF文件第3页 
Ordering number : ENN8402  
NPN Triple Diffused Planar Silicon Darlington Transistor  
2SD2712  
Driver Applications  
Applications  
•
Suitable for use in control motor drivers, printer hammer drivers, relay drivers, audio output and  
constant-voltage regulators.  
Features  
•
•
•
•
High DC current gain.  
Wide ASO.  
Low saturation voltage.  
Adoption of MBIT process.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
180  
160  
6
V
V
I
10  
A
C
Collector Current (Pulse)  
I
16  
A
CP  
2.5  
110  
150  
W
W
°C  
°C  
Collector Dissipation  
P
C
Tc=25°C  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=180V, I =0A  
Unit  
min  
max  
0.1  
10  
I
V
V
V
V
mA  
mA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
I
=6V, I =0A  
C
EBO  
DC Current Gain  
h
FE  
=5V, I =6.5A  
5000  
C
Gain-Bandwidth Product  
f
T
=5V, I =6.5A  
15  
MHz  
V
C
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector Sustain Voltage  
V
CE  
V
BE  
(sat)  
I
C
I
C
I
C
I
C
=5.5A, I =11mA  
1.5  
2.3  
B
(sat)  
=5.5A, I =11mA  
V
B
V
=1mA, I =0A  
180  
160  
V
(BR)CBO  
E
V
=100mA, I =0A  
V
CEO(SUS)  
B
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
81205CB MS IM TB-00001697  
No.8402-1/3  
123

中文翻译

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