Ordering number : ENA0437A
2SB1739 / 2SD2720
SANYO Sem iconductors
DATA S HEET
PNP / NPN Epitaxial Planar Silicon Transistors
Compact Motor Driver
Applications
2SB1739 / 2SD2720
Features
•
Low saturation voltage.
•
Contains diode between collector and emitter.
•
Contains bias resistance between base and emitter.
•
Large current capacity.
Specifications ( ) : 2SB1739
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
(--)40
(--)30
(--)6
(--)3
(--)5
1
V
V
I
A
C
Collector Current (Pulse)
I
A
CP
W
W
°C
°C
Collector Dissipation
P
C
Tc=25°C
15
Junction Temperature
Storage Temperature
Tj
Tstg
150
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
=(--)30V, I =0A
Unit
min
max
I
V
V
V
V
V
(--)1.0
µA
CBO
CB
CE
CE
CE
CB
E
h
h
1
2
=(--)2V, I =(--)0.5A
70
50
FE
FE
C
DC Current Gain
=(--)2V, I =(--)2A
C
Gain-Bandwidth Product
f
T
=(--)2V, I =(--)0.5A
C
100
(55)40
MHz
pF
V
Output Capacitance
Cob
=(--)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
V
V
(sat)
I
C
I
C
I
C
I
C
I
C
=(--)2A, I =(--)100mA
(--0.28)0.23 (--0.6)0.5
(--)1.5
CE
B
(sat)
=(--)2A, I =(--)100mA
V
BE
B
V
=(--)10µA, I =0A
(--)40
(--)40
(--)30
V
(BR)CBO
E
V
1
=(--)10µA, R =∞
BE
V
(BR)CEO
(BR)CEO
Collector-to-Emitter Breakdown Voltage
V
2
=(--)10mA, R =∞
BE
V
Diode Forwad Voltage
V
I =(--)0.5A
F
(--)1.5
0.8
V
F
Base-to-Emitter Resistance
R
kΩ
BE
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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No. A0437-1/5