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2SD2719 PDF预览

2SD2719

更新时间: 2024-11-03 12:50:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管开关光电二极管电机驱动
页数 文件大小 规格书
5页 208K
描述
Solenoid Drive Applications Motor Drive Applications

2SD2719 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.51Is Samacsys:N
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:70 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):2000
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SD2719 数据手册

 浏览型号2SD2719的Datasheet PDF文件第2页浏览型号2SD2719的Datasheet PDF文件第3页浏览型号2SD2719的Datasheet PDF文件第4页浏览型号2SD2719的Datasheet PDF文件第5页 
2SD2719  
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power)  
2SD2719  
Solenoid Drive Applications  
Motor Drive Applications  
Unit: mm  
High DC current gain: h = 2000 (min) (V  
= 2 V, I = 1 A)  
FE  
CE C  
Zener diode included between collector and base  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
60±10  
8
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
DC  
I
0.8  
C
Collector current  
Base current  
A
A
1. Base  
2. Emitter  
3. Collector  
Pulse  
I
3
CP  
I
0.5  
B
DC  
0.8  
Collector power  
dissipation  
P
(Note)  
W
C
JEDEC  
JEITA  
t = 10 s  
1.25  
150  
Junction temperature  
T
j
°C  
°C  
TOSHIBA  
2-3S1C  
Storage temperature range  
T
stg  
55 to 150  
Weight: 0.01 g (typ.)  
Note1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area,  
645 mm2)  
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Equivalent Circuit  
Collector  
Base  
Emitter  
300 Ω  
5 kΩ  
1
2007-06-07  

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