是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.51 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.8 A | 集电极-发射极最大电压: | 70 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 2000 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 1.25 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2719(TE85L,F) | TOSHIBA |
获取价格 |
800mA, 70V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD2720 | SANYO |
获取价格 |
PNP / NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications | |
2SD2720(TP-FA) | ONSEMI |
获取价格 |
TRANSISTOR,BJT,NPN,30V V(BR)CEO,3A I(C),TO-252VAR | |
2SD2721 | SANYO |
获取价格 |
NPN Triple Diffused Planar Silicon Transistor Driver Applications | |
2SD2767 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-220AB | |
2SD2873R | SWST |
获取价格 |
功率三极管 | |
2SD287A | NEC |
获取价格 |
Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
2SD287AQ | NEC |
获取价格 |
Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
2SD287AR | NEC |
获取价格 |
Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
2SD287B | NEC |
获取价格 |
Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 |