Datasheet > 2SD2704K_12

2SD2704K_12

更新时间： 2024-09-23 12:50:15

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
4页	161K
描述
For Muting

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中文翻译

获取价格

数据手册

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2SD2704K_12 数据手册

For Muting (20V, 0.3A)

2SD2704K

Features

Dimensions (Unit : mm)

1) High DC current gain.

h^FE= 820 to 2700

2) High emitter-base voltage.

VEBO = 25V (Min.)

3) Low Ron

2SD2704K

2.9

1.1

0.8

0.4

( )

Ron= 0.7 (Typ.)

Structure

Epitaxial planar type

NPN silicon transistor

( )

(1) Emitter

(2) Base

0.95 0.95

0.15

1.9

(3) Collector

Each lead has same dimensions

ROHM : SMT3

EIAJ : SC-59

Abbreviated symbol : XL

Packaging specifications

Package

Code

Taping

T146

Basic ordering

unit (pieces)

3000

Type

2SD2704K

Absolute maximum ratings (Ta=25C)

Symbol

Limits

Unit

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

VCBO

VCEO

VEBO

0.3

Collector power dissipation

Junction temperature

Storage temperature

0.2

°C

150

Tstg

−55 to +150

Electrical characteristics (Ta=25C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

BV^CBO

−

=10μA

=1mA

BVCEO

BVEBO

−

=10μA

CB=50V

EB=25V

CBO

−

0.1

100

2700

−

μA

−

Emitter cutoff current

EBO

−

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

VCE(sat)

−

CE=2V, I

CE=6V, I

CB=10V, I

=5mA, Vi=100mV(rms), f=1kHz

=30mA/3mA

=4mA

= −4mA, f=10MHz

=0A, f=1MHz

820

−

3.9

0.7

MHz

∗

Output capacitance

Cob

−

Output On-resistance

Ron

−

Measured using pulse current

∗

www.rohm.com

2012.01 - Rev.C

1/3

12 3 4

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