Datasheet > 2SD288

2SD288

更新时间： 2024-09-22 21:55:27

品牌	Logo	应用领域
永盛 - Wing Shing		晶体放大器晶体管功率放大器局域网
页数	文件大小	规格书
1页	35K
描述
NPN EPITAXIAL SILICON TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER)

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中文翻译

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数据手册

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2SD288 数据手册

2SD288

NPN EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER

TO-220

ABSOLUTE MAXIMUM RATINGS (T_A=25^oC)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current (DC)

Collector Dissipation (Tc=25^oC)

Junction Temperature

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

P^C

T^j

8 0

150

-50~150

^oC

Storage Temperature

Tstg

ELECTRICAL CHARACTERISTICS (T_A=25^oC)

Characteristic

Collector Cutoff Current

Symbol

Test Condition

Min

Typ

Max

Unit

I^CBO

V^CB= 50V , I^E=0

µA

DC Current Gain

Collector- Emitter Saturation Voltage

Current Gain Bandwidth Product

h^FE1

V^CE(sat)

V^CE= 5V , I^C=0.5A

I^C=1A ,

I^B=0.1A

240

1.0

Wing Shing Computer Components Co., (H.K)Ltd.

Homepage: http:/ /www.wingshing.com

TeL(852)2341 9276 Fax:(852)2797 8153.

e_ mail:ws@wingshing.com

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