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2SD288 PDF预览

2SD288

更新时间: 2024-11-03 06:25:51
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
4页 85K
描述
Silicon NPN Power Transistors

2SD288 数据手册

 浏览型号2SD288的Datasheet PDF文件第2页浏览型号2SD288的Datasheet PDF文件第3页浏览型号2SD288的Datasheet PDF文件第4页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD288  
DESCRIPTION  
·
·With TO-220C package  
·Collector-base voltage : VCBO=80V  
·Collector dissipation : PC=25W(TC=25)  
APPLICATIONS  
·Low frequency power amplifier  
·Power regulator applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
80  
Open base  
55  
V
Open collector  
5
3
V
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25℃  
25  
W
Tj  
150  
-55~150  
Tstg  

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