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2SD2716 PDF预览

2SD2716

更新时间: 2024-11-03 20:00:47
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网开关晶体管
页数 文件大小 规格书
5页 179K
描述
TRANSISTOR 6 A, 600 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, TO-3P, 2-16E3A, 3 PIN, BIP General Purpose Power

2SD2716 技术参数

生命周期:Obsolete零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.84
外壳连接:COLLECTOR最大集电极电流 (IC):6 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):5JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):2 MHz
Base Number Matches:1

2SD2716 数据手册

 浏览型号2SD2716的Datasheet PDF文件第2页浏览型号2SD2716的Datasheet PDF文件第3页浏览型号2SD2716的Datasheet PDF文件第4页浏览型号2SD2716的Datasheet PDF文件第5页 
2SD2716  
TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type  
2SD2716  
Horizontal Deflection Output for Color TVs  
Unit: mm  
z
z
z
z
z
z
High voltage  
: V  
: V  
= 1500 V  
CBO  
Low saturation voltage  
High speed  
= 5 V (max)  
CE (sat)  
: t = 0.3 µs (Typ.)  
f
Built-in damper type  
Collector metal (fin) is fully covered with mold resin.  
TO-3P(H)IS package  
Absolute Maximum Ratings (T = 25°C)  
a
Characteristic  
Symbol  
Rating  
Unit  
Collectorbase voltage  
Collectoremitter voltage  
Emitterbase voltage  
V
CBO  
V
CEO  
V
EBO  
1500  
V
V
V
600  
7
DC  
Pulse  
I
6
12  
C
Collector current  
A
I
CP  
Base current  
I
3
A
JEDEC  
JEITA  
B
Collector power dissipation  
Junction temperature  
P
50  
W
°C  
°C  
C
T
150  
55~150  
j
TOSHIBA  
2-16E3A  
Storage temperature range  
T
stg  
Weight: 5.5 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Thermal Characteristics  
Equivalent Circuit  
Characteristics  
Symbol Rating  
Unit  
2.Collector  
Thermal resistance , junction to case  
R
th (j-c)  
2.5  
°C/W  
(Tc = 25°C)  
1.Base  
75 (Typ.)  
3.Emitter  
1
2006-11-22  

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