生命周期: | Obsolete | 零件包装代码: | TO-3P |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 6 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 5 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 2 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2719 | TOSHIBA |
获取价格 |
Solenoid Drive Applications Motor Drive Applications | |
2SD2719(TE85L,F) | TOSHIBA |
获取价格 |
800mA, 70V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD2720 | SANYO |
获取价格 |
PNP / NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications | |
2SD2720(TP-FA) | ONSEMI |
获取价格 |
TRANSISTOR,BJT,NPN,30V V(BR)CEO,3A I(C),TO-252VAR | |
2SD2721 | SANYO |
获取价格 |
NPN Triple Diffused Planar Silicon Transistor Driver Applications | |
2SD2767 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-220AB | |
2SD2873R | SWST |
获取价格 |
功率三极管 | |
2SD287A | NEC |
获取价格 |
Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
2SD287AQ | NEC |
获取价格 |
Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
2SD287AR | NEC |
获取价格 |
Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 |