2SD2701

更新时间： 2024-11-03 00:00:47

品牌	Logo	应用领域
罗姆 - ROHM		放大器
页数	文件大小	规格书
3页	90K
描述
Low frequency amplifier

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中文翻译

获取价格

数据手册

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2SD2701 数据手册

2SD2701

Transistors

Low frequency amplifier

2SD2701

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

(2)

(1)

(3)

0.2

1.7

2.1

0.2

zFeatures

1) A collector current is large.

2) V^CE(sat)≦ 350mV

At I^C= 1A / IB = 50mA

0.15Max.

ROHM : TUMT3 Abbreviated symbol : FZ

(1) Base

(2) Emitter

(3) Collector

zPackaging specifications

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Symbol

Limits

Unit

Package

Taping

VCBO

VCEO

VEBO

Type

Code

Basic ordering unit (pieces)

Collector-emitter voltage

Emitter-base voltage

3000

2SD2701

A^∗1

Collector current

0.4

0.8^∗2

Power dissipation

Junction temperature

Tstg

150

−55 to +150

°C

Range of storage temperature

∗1 Single pulse, P

=1ms

∗2 Mounted on a 25

^t0.8mm Ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BVCEO

BV^EBO

Min.

Typ.

−

140

−

300

Max.

−

Unit

Conditions

=10µA

=1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=10µA

CB=30V

EB=6V

CBO

EBO

CE(sat)

−

270

−

100

350

680

−

MHz

Emitter cutoff current

=1A, I =50mA

Collector-emitter saturation voltage

DC current gain

CE=2V, I

=100mA^∗

=−100mA, f=100MHz^∗

Transition frequency

CB=10V, I

E=0A, f=1MHz

Cob

−

Corrector output capacitance

∗ Pulsed

Rev.A

1/2

12 3

中文翻译

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