Datasheet > 2SD2700

2SD2700

更新时间： 2024-11-03 00:00:47

品牌	Logo	应用领域
罗姆 - ROHM		放大器
页数	文件大小	规格书
3页	90K
描述
Low frequency amplifier

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中文翻译

获取价格

数据手册

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2SD2700 数据手册

2SD2700

Transistors

Low frequency amplifier

2SD2700

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

(2)

(1)

(3)

zFeatures

0.2

1.7

2.1

0.2

1) A collector current is large.

2) V^CE(sat)≦ 180mV

at I^C= 1A / IB = 50mA

0.15Max.

ROHM : TUMT3 Abbreviated symbol : FW

(1) Base

(2) Emitter

(3) Collector

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

A^∗1

Collector current

0.4

0.8^∗2

Power dissipation

Junction temperature

Tstg

150

−55 to +150

°C

Range of storage temperature

∗1 Single pulse, P

=1ms

∗2 Mounted on a 25

^t0.8mm Ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

−

Unit

Conditions

BV^CBO

BVCEO

BV^EBO

−

360

=10µA

=1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=10µA

CB=15V

EB=6V

CBO

EBO

CE(sat)

−

270

−

100

180

680

−

MHz

Emitter cutoff current

C=1A, I

=50mA

Collector-emitter saturation voltage

DC current gain

CE=2V, I

=200mA^∗

=−200mA, f=100MHz^∗

=0A, f=1MHz

Transition frequency

CB=10V, I

Cob

−

Corrector output capacitance

∗ Pulsed

zPackaging specifications

Package

Code

Taping

Basic ordering unit (pieces)

3000

Type

2SD2700

Rev.A

1/2

12 3

中文翻译

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