生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 100 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 1000 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
VCEsat-Max: | 1.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1660MC2A | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1660MC2C | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1661M | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 1.5A I(C) | SIP | |
2SD1661MA | ROHM |
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Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1661MB | ROHM |
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Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1661MC | ROHM |
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Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1661MC2 | ROHM |
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Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1661MC2A | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1661MC2B | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1661MC2C | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon |