Datasheet > 2SD1662_06

2SD1662_06

更新时间： 2024-11-04 07:31:31

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
4页	129K
描述
High Current Switching Applications

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2SD1662_06 数据手册

2SD1662

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)

2SD1662

High Current Switching Applications

Unit: mm

•

High DC current gain: h

= 1000 (min) (V

= 3 V, I = 15 A)

CE C

Low collector saturation voltage: V

= 1.5 V (max) (I = 15 A)

CE (sat)

Monolithic construction with built-in base-emitter shunt resistor

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

100

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

(Tc = 25°C)

100

JEDEC

JEITA

―

Junction temperature

Storage temperature range

150

°C

stg

−55 to 150

TOSHIBA

2-16C1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 4.7 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

COLLECTOR

BASE

≈ 2 kΩ

≈ 200 Ω

EMITTER

2006-11-21

12 3 4

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