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2SD1664 PDF预览

2SD1664

更新时间: 2024-11-04 07:31:31
品牌 Logo 应用领域
WEITRON 晶体小信号双极晶体管
页数 文件大小 规格书
5页 254K
描述
NPN Epitaxial Planar Transistors

2SD1664 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.22
Base Number Matches:1

2SD1664 数据手册

 浏览型号2SD1664的Datasheet PDF文件第2页浏览型号2SD1664的Datasheet PDF文件第3页浏览型号2SD1664的Datasheet PDF文件第4页浏览型号2SD1664的Datasheet PDF文件第5页 
2SD1664  
NPN Epitaxial Planar Transistors  
P b  
Lead(Pb)-Free  
1. BASE  
2. COLLECTOR  
1
3. EMITTER  
2
3
Features:  
* Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)  
SOT-89  
ABSOLUTE MAXIMUM RATINGS (T =25˚C)  
A
Rating  
Symbol  
Limits  
Unit  
V
V
Collector-Base Voltage  
CBO  
40  
32  
V
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
CEO  
V
EBO  
5.0  
Collector Current  
I
A
1.0  
0.5  
C
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
W
P
D
T
-55 to +150  
-55 to +150  
j
˚C  
˚C  
T
stg  
ELECTRICAL CHARACTERISTICS(T =25˚C unless otherwise noted)  
A
Min  
Typ  
Parameter  
Symbol  
Max  
Unit  
Collector-Base Breakdown Voltage  
BV  
BV  
BV  
40  
-
-
V
V
CBO  
CEO  
EBO  
CBO  
EBO  
I =50µA, I =0  
C
E
Collector-Emitter Breakdown Voltage  
I =1mA, I =0  
32  
5
-
-
-
-
-
-
-
C
B
Emitter-Base Breakdown Voltage  
I =50µA, I =0  
V
E
C
I
I
0.5  
0.5  
µA  
µA  
V
V
=20V, I =0  
E
CB  
-
=4V, I =0  
EB  
C
WEITRON  
http://www.weitron.com.tw  
1/5  
11-Dec-08  

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