Datasheet > 2SD1664

2SD1664

更新时间： 2024-11-04 12:54:35

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	126K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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2SD1664 数据手册

RoHS

2SD1664

SOT-89

1. ^BASE

2SD1664 TRANSISTOR (NPN)

FEATURES

Power dissipation

2. ^COLLECTOR

3. ^EMITTER

P_CM:

0.5

W (Tamb=25℃)

Collector current

I_CM:

Collector-base voltage

V_(BR)CBO

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=50µA, I_E=0

Ic=1mA, I_B=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=50µA, I_C=0

µA

V_CB=20V, I_E=0

0.5

390

0.4

I_EBO

Emitter cut-off current

V_EB=4V, I_C=0

h_FE(1)

DC current gain

V_CE=3V, I_C=0.1A

V_CE(sat)

Collector-emitter saturation voltage

Transition frequency

I_C=500mA, I_B=50mA

MHz

f_T

V_CE=5V, I_C=50mA , f=1MHz

150

C_ob

Collector output capacitance

_CB=10V, I_E=0, f=1MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

82-180

120-270

180-390

WEJ ELECTRONIC CO.,LTD

Marking

DAP

DAQ

DAR

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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