Datasheet > 2SD1664

2SD1664

更新时间： 2024-10-15 18:10:07

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合科泰 - HOTTECH		/
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4页	509K
描述
SOT-89

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中文翻译

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数据手册

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2SD1664 数据手册

2SD1664

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to 2SB1132

 Low Collector-emitter saturation voltage

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

500

°C

Junction Temperature

Storage Temperature

150

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ

Unit

Conditions

I_C=50uA，I_E=0

I =1mA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter

voltage

breakdown

V(BR)CEO

，

V(BR)EBO

I_CBO

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

I_E=50uA，I_C=0

V_CB=20V, I_E=0

V_EB=4V, I_C=0

0.5

390

0.3

I_EBO

h_FE

V_CE=3V, I_C=1mA

I_C=0.5A，I_B=50mA

Collector-emitter saturation voltage V_CE(sat)

V_CE=5V,I_C=50mA,f=100

Transition frequency

f_T

150

MHz

V_CB=10V, I_E=0, f=1

Collector output capacitance

C_ob

MHz

CLASSIFICATION OF h_FE

Rank

Range

82-180

DAP

120-270

DAQ

180-390

DAR

Marking

1 / 4

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