Datasheet > 2SD1664

2SD1664

更新时间： 2023-12-06 20:09:53

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	791K
描述
双极型晶体管

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2SD1664 数据手册

2SD1664

SOT-89 Transistor(NPN)

1. ^BASE

SOT-89

2. ^COLLECTOR

3. ^EMITTER

4.6

4.4

1.6

1.4

1.8

1.4

2.6

4.25

Features

2.4

3.75

0.8

MIN

Low V_CE(sat), V_CE(sat)=0.15V(typical).(I_C/I_B=500mA/50mA)

Complements to 2SB1132

0.53

0.40

2x)

0.48

0.35

1.5

0.44

0.37

0.13

3.0

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Dimensions in inches and (millimeters)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

Collector Current -Continuous

Collector power dissipation

Junction Temperature

P_C

500

150

-55-150

T_J

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=50μA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=50μA, I_C=0

I_CBO

I_EBO

h_FE

V_CB=20V, I_E=0

V_EB=4V, I_C=0

0.5

390

0.4

μA

Emitter cut-off current

DC current gain

V_CE=3V, I_C=100mA

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=0.5A, I_B=50mA

V_CE=5V, I_C=50mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

150

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

82-180

120-270

DAQ

180-390

Range

Marking

DAP

DAR

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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