5秒后页面跳转
2SD1664 PDF预览

2SD1664

更新时间: 2024-01-23 10:01:15
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
3页 365K
描述
Medium Power Transistor

2SD1664 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.61最大集电极电流 (IC):1 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):82JESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN表面贴装:YES
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

2SD1664 数据手册

 浏览型号2SD1664的Datasheet PDF文件第2页浏览型号2SD1664的Datasheet PDF文件第3页 
SMD Type  
Transistors  
Medium Power Transistor  
2SD1664  
Features  
Low VCE(sat)  
Compliments to 2SB1132  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
Rating  
Unit  
V
40  
VCEO  
32  
V
VEBO  
5
V
Collector Current  
(DC)  
1
A
IC  
PW=20ms, duty=1/2  
2
0.5  
A
Collector Power Dissipation  
Jumction temperature  
PC *  
Tj  
W
150  
Storage temperature Range  
Tstg  
-55 to +150  
* mounted on a 40x40x0.7mm ceramic board.  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
0.5  
Unit  
ìA  
ìA  
V
Collector Cut-off Current  
VCB = 20V , IE = 0  
VEB = 4V , IC = 0  
Emitter Cut-off Current  
IEBO  
0.5  
Collector-base Breakdown Voltage  
Collector-emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
V(BR)CBO IC = 50uA , IE = 0  
V(BR)CEO IC = 1mA , IB = 0  
V(BR)EBO IE = 50uA  
40  
32  
5
V
hFE  
VCE = -3V , IC = -0.1A  
82  
390  
0.4  
Collector-emitter Saturation Voltage  
Transition Frequency  
VCE(sat) IC = 500mA , IB = 50mA  
0.15  
150  
15  
V
fT  
VCE = 5V , IE = -50mA , f = 100MHz  
VCB = 10V , IE = 0 , f = 1MHz  
MHz  
pF  
Collector Output Capacitance  
Cob  
hFE Classification  
DA  
Q
Marking  
Rank  
hFE  
P
R
82  
180  
120  
270  
180  
390  
1
www.kexin.com.cn  

与2SD1664相关器件

型号 品牌 描述 获取价格 数据表
2SD1664_09 ROHM Medium Power Transistor (32V, 1A)

获取价格

2SD1664_09 UTC MEDIUM POWER NPN TRANSISTOR

获取价格

2SD1664_1 ROHM Medium Power Transistor (32V, 1A)

获取价格

2SD1664_15 KEXIN NPN Transistors

获取价格

2SD1664_15 WINNERJOIN NPN TRANSISTOR

获取价格

2SD1664G-P-AB3-R UTC Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN F

获取价格