Datasheet > 2SD1664

2SD1664

更新时间： 2024-11-04 06:22:15

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
3页	365K
描述
Medium Power Transistor

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中文翻译

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数据手册

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2SD1664 数据手册

SMD Type

Transistors

Medium Power Transistor

2SD1664

Features

Low VCE(sat)

Compliments to 2SB1132

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

Rating

Unit

V^CEO

V^EBO

Collector Current

(DC)

I^C

P^W=20ms, duty=1/2

0.5

Collector Power Dissipation

Jumction temperature

P^C*

T^j

150

Storage temperature Range

Tstg

-55 to +150

* mounted on a 40x40x0.7mm ceramic board.

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

0.5

Unit

ìA

Collector Cut-off Current

VCB = 20V , IE = 0

VEB = 4V , IC = 0

Emitter Cut-off Current

I^EBO

0.5

Collector-base Breakdown Voltage

Collector-emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

V^(BR)CBOIC = 50uA , IE = 0

V^(BR)CEOIC = 1mA , IB = 0

V(BR)EBO IE = 50uA

h^FE

VCE = -3V , IC = -0.1A

390

0.4

Collector-emitter Saturation Voltage

Transition Frequency

V^CE(sat)IC = 500mA , IB = 50mA

0.15

150

f^T

VCE = 5V , IE = -50mA , f = 100MHz

VCB = 10V , IE = 0 , f = 1MHz

MHz

Collector Output Capacitance

C^ob

hFE Classification

Marking

Rank

h^FE

180

120

270

180

390

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