Datasheet > 2SD1658_09

2SD1658_09

更新时间： 2024-11-04 07:31:31

品牌	Logo	应用领域
东芝 - TOSHIBA		电机驱动
页数	文件大小	规格书
5页	157K
描述
Micro Motor Drive, Hammer Drive Applications

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中文翻译

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数据手册

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2SD1658_09 数据手册

2SD1658

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)

2SD1658

Micro Motor Drive, Hammer Drive Applications

Unit: mm

Switching Applications

Power Amplifier Applications

•

High DC current gain: h

= 2000 (min) (V

= 2 V, I = 1 A)

CE C

Low saturation voltage: V

= 1.5 V (max) (I = 1 A, I = 1 mA)

C B

CE (sat)

Zener diode included between collector and base

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

60 ± 10

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

0.5

JEDEC

JEITA

―

Ta = 25°C

Tc = 25°C

1.5

Collector power

dissipation

TOSHIBA

2-8H1A

Junction temperature

150

°C

Weight: 0.82 g (typ.)

Storage temperature range

stg

−55 to 150

Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

COLLECTOR

BASE

≈ 4 kΩ

≈ 800 Ω

EMITTER

2009-12-21

12 3 4 5

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