2SD1164-AZ

更新时间： 2024-11-30 13:04:23

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管功率双极晶体管开关
页数	文件大小	规格书
6页	1796K
描述
SILICON POWER TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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2SD1164-AZ 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	风险等级：	5.64
Base Number Matches：	1

2SD1164-AZ 数据手册

Preliminary Data Sheet

R07DS0254EJ0400

Rev.4.00

2SD1164-Z

SILICON POWER TRANSISTOR

Feb 24, 2011

DESCRIPTION

The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.

FEATURES

•

High hFE = 2 000 to 30 000

<R>

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

CHARACTERISTICS

Collector to Base Voltage

SYMBOL

VCBO

VCEO

VEBO

IC(DC)

I^C(pulse)

P^T

RATINGS

UNIT

150

Collector to Emitter Voltage

Base to Emitter Voltage

8.0

Collector Current (DC)

Collector Current (pulse)^{Note 1}

Total Power Dissipation (TA = 25°C)^{Note 2}

Junction Temperature

2.0

°C

150

Storage Temperature

Tstg

−55 to +150

Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 7.5 cm²× 0.7 mm

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R07DS0254EJ0400 Rev.4.00

Feb 24, 2011

Page 1 of 4

12 3 4 5 6

中文翻译

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与2SD1164-AZ相关器件

型号	品牌	获取价格	描述	数据表
2SD1164K	ETC	获取价格	BJT
2SD1164K-Z	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 2A I(C) \| TO-252VAR
2SD1164L	ETC	获取价格	BJT
2SD1164L-Z	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 2A I(C) \| TO-252VAR
2SD1164M	ETC	获取价格	BJT
2SD1164M-Z	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 2A I(C) \| TO-252VAR
2SD1164-Z	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR MP-3
2SD1164-Z	RENESAS	获取价格	SILICON POWER TRANSISTOR
2SD1164-Z-E1	RENESAS	获取价格	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2
2SD1164-Z-E1	NEC	获取价格	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2