生命周期: | Obsolete | 包装说明: | PLASTIC, MP-3, SC-63, 3 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.64 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 60 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 8000 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
功耗环境最大值: | 2 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | VCEsat-Max: | 1.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1164-Z-T2L | NEC |
获取价格 |
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 | |
2SD1164-Z-T2M | NEC |
获取价格 |
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 | |
2SD1165A | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 900V V(BR)CEO | 100A I(C) | DISC-6 | |
2SD1166 | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 900V V(BR)CEO | 200A I(C) | DISC-67 | |
2SD1168 | PANASONIC |
获取价格 |
Transistor | |
2SD1168 | Wing Shing |
获取价格 |
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) | |
2SD1168 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2SD1168 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2SD1168P | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 5A I(C) | TO-3 | |
2SD1168Q | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 5A I(C) | TO-3 |