Datasheet > 2SD1180

2SD1180

更新时间： 2024-09-21 07:31:19

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	39K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SD1180 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1180

DESCRIPTION

·With TO-126 package

·Low collector saturation voltage

APPLICATIONS

·Designed for use in audio and radio

frequency power amplifiers

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

120

110

UNIT

Open emitter

Open base

Open collector

1.5

I_CM

Collector current-peak

2.5

T_a=25℃

T_C=25℃

1.2

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

中文翻译

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