Datasheet > 2SD1183

2SD1183

更新时间： 2024-02-03 01:25:09

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	263K
描述
Silicon NPN Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD1183 数据手册

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

2SD1183

DESCRIPTION

·High Breakdown Voltage-

: V_CBO= 1200V (Min)

·High Reliability

·Wide area of safe operation

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for power switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

1200

800

Collector Current- Continuous

Collector Current-Peak

I_CP

Collector Power Dissipation

@ T_CT_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

中文翻译

下载PDF

与2SD1183相关器件

型号	品牌	获取价格	描述	数据表
2SD1184	ISC	获取价格	Silicon NPN Power Transistor
2SD1185	ISC	获取价格	Silicon NPN Power Transistors
2SD1185	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SD1186	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SD1186	ISC	获取价格	Silicon NPN Power Transistors
2SD1187	ISC	获取价格	Silicon NPN Power Transistor
2SD1187	TOSHIBA	获取价格	NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, DC-DC CONVERTER AND DC-AC INVERTER APPLICA
2SD1187O	TOSHIBA	获取价格	TRANSISTOR 10 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
2SD1187-O	TOSHIBA	获取价格	TRANSISTOR 10 A, 80 V, NPN, Si, POWER TRANSISTOR, 2-16B1A, 3 PIN, BIP General Purpose Powe
2SD1187Y	TOSHIBA	获取价格	TRANSISTOR 10 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power