5秒后页面跳转
2SD1164-ZK-E2-AZ PDF预览

2SD1164-ZK-E2-AZ

更新时间: 2024-11-11 15:45:35
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 1789K
描述
TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,2A I(C),TO-252

2SD1164-ZK-E2-AZ 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):2 A配置:DARLINGTON
最小直流电流增益 (hFE):8000最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

2SD1164-ZK-E2-AZ 数据手册

 浏览型号2SD1164-ZK-E2-AZ的Datasheet PDF文件第2页浏览型号2SD1164-ZK-E2-AZ的Datasheet PDF文件第3页浏览型号2SD1164-ZK-E2-AZ的Datasheet PDF文件第4页浏览型号2SD1164-ZK-E2-AZ的Datasheet PDF文件第5页浏览型号2SD1164-ZK-E2-AZ的Datasheet PDF文件第6页 
Preliminary Data Sheet  
R07DS0254EJ0400  
Rev.4.00  
2SD1164-Z  
SILICON POWER TRANSISTOR  
Feb 24, 2011  
DESCRIPTION  
The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.  
FEATURES  
High hFE = 2 000 to 30 000  
<R>  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
CHARACTERISTICS  
Collector to Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse)  
PT  
RATINGS  
UNIT  
V
150  
Collector to Emitter Voltage  
Base to Emitter Voltage  
60  
V
8.0  
V
Collector Current (DC)  
2
A
Collector Current (pulse)Note 1  
Total Power Dissipation (TA = 25°C)Note 2  
Junction Temperature  
4
2.0  
A
W
°C  
°C  
Tj  
150  
Storage Temperature  
Tstg  
55 to +150  
Notes 1. PW 10 ms, Duty Cycle 50%  
2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
R07DS0254EJ0400 Rev.4.00  
Feb 24, 2011  
Page 1 of 4  

与2SD1164-ZK-E2-AZ相关器件

型号 品牌 获取价格 描述 数据表
2SD1164-ZL-AZ RENESAS

获取价格

暂无描述
2SD1164-ZL-E1 RENESAS

获取价格

2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP-3, 3 PIN
2SD1164-ZL-E1 NEC

获取价格

2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP-3, 3 PIN
2SD1164-ZL-E1-AZ RENESAS

获取价格

TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,2A I(C),TO-252
2SD1164-ZL-E2 RENESAS

获取价格

2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP-3, 3 PIN
2SD1164-ZL-E2 NEC

获取价格

2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP-3, 3 PIN
2SD1164-ZM-E1 NEC

获取价格

2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP-3, 3 PIN
2SD1164-ZM-E1 RENESAS

获取价格

2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP-3, 3 PIN
2SD1164-ZM-E2-AZ RENESAS

获取价格

TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,2A I(C),TO-252
2SD1164-Z-T1 NEC

获取价格

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2